# isc Silicon NPN Power Transistor 2N4912

## Description
· Collector-Emitter Sustaining Voltage: V CEO(SUS) = 80V
· Low Collector Saturation Voltage: V CE(sat) = 0.6V (Max.) @ I C = 1A
· Complement to Type 2N4900

## Applications
· Designed for driver circuits, switching, and amplifier applications.

## Absolute Maximum Ratings (Ta=25℃)
· VCBO: 80V
· VCEO: 80V
· VEBO: 5V
· IC (Continuous): 1A
· ICM (Peak): 4A
· IB (Continuous): 1A
· PC (Dissipation): 25W
· TJ (Junction Temperature): 200℃
· Tstg (Storage Temperature Range): -65~200℃

## Thermal Characteristics
· Rth j-c (Junction to Case Thermal Resistance): 7.0 ℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)
· VCEO(SUS) (Sustaining Voltage): 80V @ IC= 100mA, IB= 0
· VCE(sat) (Saturation Voltage): 0.6V @ IC= 1A, IB= 0.1A
· VBE(sat) (Base-Emitter Saturation Voltage): 1.3V @ IC= 1A, IB= 0.1A
· VBE(on) (Base-Emitter On Voltage): 1.3V @ IC= 1A, VCE= 1V
· ICEX (Collector Cutoff Current): 0.1-1.0mA
· ICEO (Collector Cutoff Current): 0.5mA
· ICBO (Collector Cutoff Current): 0.1mA
· IEBO (Emitter Cutoff Current): 1.0mA
· hFE-1 (DC Current Gain): 40 (at IC= 50mA, VCE= 1V)
· hFE-2 (DC Current Gain): 20-100 (at IC= 500mA, VCE= 1V)
· hFE-3 (DC Current Gain): 10 (at IC= 1A, VCE= 1V)
· fT (Current-Gain Bandwidth Product): 3 MHz (at IC= 0.25A, VCE= 10V, ftest= 1MHz)
· COB (Output Capacitance): 100 pF (at IE= 0, VCB= 10V, ftest= 100kHz)

## Website
· www.iscsemi.cn