2N4912 datasheet(1/2 Pages) ISC

No. de pieza	2N4912

Descripción Electrónicos	Silicon NPN Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2N4912

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 80V(Min)

·Low Collector Saturatioin Voltage-

: VCE(sat)= 0.6V(Max.)@ IC= 1A

·Wide Area of Safe Operation

·Complement to Type 2N4900

APPLICATIONS

·Designed for driver circuits, switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1

A

ICM

Collector Current-Peak

4

A

IB

Collector Current-Continuous

1

A

PC

Collector Power Dissipation

@ TC=25℃

25

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

7.0

℃/W

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2N4912 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2N4912 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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