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  • Part No.2SD235
    ManufacturerISC
    Size64 Kbytes
    Pages3 pages
    DescriptionSilicon NPN Power Transistors
    Datasheet Summary with AI

    # Silicon NPN Power Transistor 2SD235

    ## Description
    · TO-220 package
    · Complement to type 2SB435
    · Designed for low frequency power amplifier and switching applications

    ## Pinning
    · Pin 1: Base
    · Pin 2: Collector (connected to mounting base)
    · Pin 3: Emitter

    ## Absolute Maximum Ratings (Ta=25℃)
    · VCBO (Collector-base voltage): 50V
    · VCEO (Collector-emitter voltage): 40V
    · VEBO (Emitter-base voltage): 6V
    · IC (Collector current): 3A
    · PC (Collector power dissipation): 25W (at TC=25℃)
    · Tj (Junction temperature): 150℃
    · Tstg (Storage temperature): -55~150℃

    ## Characteristics (Tj=25℃ unless otherwise specified)
    · V(BR)CEO (Collector-emitter breakdown voltage): 40V
    · V(BR)CBO (Collector-base breakdown voltage): 50V
    · V(BR)EBO (Emitter-base breakdown voltage): 6V
    · VCEsat (Collector-emitter saturation voltage): 1.0V
    · VBEsat (Base-emitter saturation voltage): 1.5V
    · ICBO (Collector cut-off current): 10μA
    · IEBO (Emitter cut-off current): 10μA
    · hFE (DC current gain): 40-240
    · COB (Output capacitance): 90pF
    · fT (Transition frequency): 3MHz

    ## hFE Classifications
    · R: 40-80
    · O: 70-140
    · Y: 120-240

    ## Package
    · TO-220 package (See Fig. 2 for outline dimensions, tolerance ±0.10mm)

    # Silicon NPN Power Transistor 2SD235

    ## Description
    · TO-220 package
    · Complement to type 2SB435
    · Designed for low frequency power amplifier and switching applications

    ## Pinning
    · Pin 1: Base
    · Pin 2: Collector (connected to mounting base)
    · Pin 3: Emitter

    ## Absolute Maximum Ratings (Ta=25℃)
    · VCBO (Collector-base voltage): 50V
    · VCEO (Collector-emitter voltage): 40V
    · VEBO (Emitter-base voltage): 6V
    · IC (Collector current): 3A
    · PC (Collector power dissipation): 25W (at TC=25℃)
    · Tj (Junction temperature): 150℃
    · Tstg (Storage temperature): -55~150℃

    ## Characteristics (Tj=25℃ unless otherwise specified)
    · V(BR)CEO (Collector-emitter breakdown voltage): 40V
    · V(BR)CBO (Collector-base breakdown voltage): 50V
    · V(BR)EBO (Emitter-base breakdown voltage): 6V
    · VCEsat (Collector-emitter saturation voltage): 1.0V
    · VBEsat (Base-emitter saturation voltage): 1.5V
    · ICBO (Collector cut-off current): 10μA
    · IEBO (Emitter cut-off current): 10μA
    · hFE (DC current gain): 40-240
    · COB (Output capacitance): 90pF
    · fT (Transition frequency): 3MHz

    ## hFE Classifications
    · R: 40-80
    · O: 70-140
    · Y: 120-240

    ## Package
    · TO-220 package (See Fig. 2 for outline dimensions, tolerance ±0.10mm)

    Part No.2SD235
    ManufacturerISC
    Size64 Kbytes
    Pages3 pages
    DescriptionSilicon NPN Power Transistors
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