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Hello, Please ask a question about 2SD235 Datasheet
# Example questions:
➢ How does the collector-emitter saturation voltage change with a collector current of 1a and a base current of 50ma?
➢ What are the different hfe classifications available for this transistor, and what range of dc current gain does each represent?
➢ What is the maximum collector current this transistor can handle?
# Silicon NPN Power Transistor 2SD235
## Description
· TO-220 package
· Complement to type 2SB435
· Designed for low frequency power amplifier and switching applications
## Pinning
· Pin 1: Base
· Pin 2: Collector (connected to mounting base)
· Pin 3: Emitter
## Absolute Maximum Ratings (Ta=25℃)
· VCBO (Collector-base voltage): 50V
· VCEO (Collector-emitter voltage): 40V
· VEBO (Emitter-base voltage): 6V
· IC (Collector current): 3A
· PC (Collector power dissipation): 25W (at TC=25℃)
· Tj (Junction temperature): 150℃
· Tstg (Storage temperature): -55~150℃
## Characteristics (Tj=25℃ unless otherwise specified)
· V(BR)CEO (Collector-emitter breakdown voltage): 40V
· V(BR)CBO (Collector-base breakdown voltage): 50V
· V(BR)EBO (Emitter-base breakdown voltage): 6V
· VCEsat (Collector-emitter saturation voltage): 1.0V
· VBEsat (Base-emitter saturation voltage): 1.5V
· ICBO (Collector cut-off current): 10μA
· IEBO (Emitter cut-off current): 10μA
· hFE (DC current gain): 40-240
· COB (Output capacitance): 90pF
· fT (Transition frequency): 3MHz
## hFE Classifications
· R: 40-80
· O: 70-140
· Y: 120-240
## Package
· TO-220 package (See Fig. 2 for outline dimensions, tolerance ±0.10mm)
# Silicon NPN Power Transistor 2SD235
## Description
· TO-220 package
· Complement to type 2SB435
· Designed for low frequency power amplifier and switching applications
## Pinning
· Pin 1: Base
· Pin 2: Collector (connected to mounting base)
· Pin 3: Emitter
## Absolute Maximum Ratings (Ta=25℃)
· VCBO (Collector-base voltage): 50V
· VCEO (Collector-emitter voltage): 40V
· VEBO (Emitter-base voltage): 6V
· IC (Collector current): 3A
· PC (Collector power dissipation): 25W (at TC=25℃)
· Tj (Junction temperature): 150℃
· Tstg (Storage temperature): -55~150℃
## Characteristics (Tj=25℃ unless otherwise specified)
· V(BR)CEO (Collector-emitter breakdown voltage): 40V
· V(BR)CBO (Collector-base breakdown voltage): 50V
· V(BR)EBO (Emitter-base breakdown voltage): 6V
· VCEsat (Collector-emitter saturation voltage): 1.0V
· VBEsat (Base-emitter saturation voltage): 1.5V
· ICBO (Collector cut-off current): 10μA
· IEBO (Emitter cut-off current): 10μA
· hFE (DC current gain): 40-240
· COB (Output capacitance): 90pF
· fT (Transition frequency): 3MHz
## hFE Classifications
· R: 40-80
· O: 70-140
· Y: 120-240
## Package
· TO-220 package (See Fig. 2 for outline dimensions, tolerance ±0.10mm)
| Part No. | 2SD235 |
| Manufacturer | ISC |
| Size | 64 Kbytes |
| Pages | 3 pages |
| Description | Silicon NPN Power Transistors |
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