DFE201612E-R33M pdf, DFE201612E-R33M Descarga, DFE201612E-R33M Descripción Electrónicos, DFE201612E-R33M Datasheet, DFE201612E-R33M view ::: ALLDATASHEET :::

Número de pieza similar - DFE201612E-R33M

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
TOKO, Inc	DFE201612E-R33M	226Kb / 1P	Metal Alloy Inductors
Murata Manufacturing Co...	DFE201612E-R33M	982Kb / 2P	Inductor
Murata Manufacturing Co...	DFE201612E-R33M	2Mb / 2P	Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
Kinetic Technologies.	DFE201612E-R33M	1Mb / 25P	3A, 2.4MHz, Low-Voltage, I2C Programmable Buck Regulator December 2021 - Revision 04b
Analog Devices	DFE201612E-R33M	1Mb / 17P	500mV to 5.5V Input nanoPower Boost Converter with Short-Circuit Protection Rev 0; 2/23

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	MTW16N40E	217Kb / 8P	TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
Intersil Corporation	FRM240D	47Kb / 6P	16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998
Fairchild Semiconductor	FDP19N40	264Kb / 9P	N-Channel MOSFET 400V, 19A, 0.24廓
ON Semiconductor	MUN2132	145Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k September, 2012 ??Rev. 1
ON Semiconductor	MUN2232	140Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k August, 2012 ??Rev. 0
Fairchild Semiconductor	FDP19N40	232Kb / 8P	N-Channel MOSFET 400V, 19A, 0.24廓
TOKO, Inc	DEM4514C	111Kb / 1P	Inductance Range: 1.2~33?쵩 (DEM4514C), 1.2~22 H (DEM4518C)
Ningbo Foryard Optoelec...	FYT-2431AX-XX	405Kb / 5P	0.24 Inch (6.00mm) digit height Single Digit Display
ON Semiconductor	MUN2132	148Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 kA March, 2013 ??Rev. 2
Kemet Corporation	C2220C244KDRLCAUTO	60Kb / 1P	KONNEKT Auto X7R, Ceramic, 0.24 uF, 10%, 1000 VDC, X7R