General Description
The HMC-ALH310 is a three stage GaAs HEMT MMIC Low Noise Amplifi er (LNA) which operates between 37 and 42 GHz. The HMC-ALH310 features 22 dB of small signal gain, 3.5 dB of noise fi gure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Features
   Noise Figure: 3.5 dB
   P1dB: +12 dBm
   Gain: 22 dB
   Supply Voltage: +2.5V
   50 Ohm Matched Input/Output
   Die Size: 1.80 x 0.73 x 0.1 mm

Typical Applications
This HMC-ALH310 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space