| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 NXP Semiconductors |
PDTA123E
|
189Kb / 14P |
PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
2004 Aug 02 |
 Nexperia B.V. All right... |
PDTA114TMB
|
617Kb / 12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = open
|
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PDTA115TMB
|
616Kb / 12P |
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open
|
|
PDTA123EMB
|
836Kb / 13P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓
|
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PDTA123JMB
|
842Kb / 12P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓
|
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PDTA123YMB
|
628Kb / 12P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 10 k廓
|
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PDTA124TMB
|
724Kb / 12P |
PNP resistor-equipped transistor; R1 = 22 k廓, R2 = open
|
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PDTA144TMB
|
724Kb / 12P |
PNP resistor-equipped transistor; R1 = 47 k廓, R2 = open
|
|
PDTC123EMB
|
960Kb / 13P |
NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓
|
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PDTC123TMB
|
732Kb / 12P |
NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = open
|