| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Dialog Semiconductor |
SLG59H1313C
|
1Mb / 28P |
A 20 m廓, 4.5 A nFET Integrated Power Switch with Surge Protection and Adjustable OVP in a 2.34 mm2 WLCSP
|
|
SLG59M1649V
|
230Kb / 13P |
An Ultra-small, Low-power 23 m廓/4 A P-Channel Integrated Power Switch with Reverse-Current Blocking
|
|
SLG59M1657V
|
351Kb / 13P |
An Ultra-small 3 mm2, 8.4 m廓, 4 A, 125째C-Rated Internally-protected Integrated Power Switch
|
|
SLG59M1658V
|
401Kb / 14P |
An Ultra-small 1.6 mm2, 17 m廓, 2.5 A, 125째C-Rated Internally-protected Integrated Power Switch with Discharge
|
|
SLG59M1685C
|
1Mb / 23P |
A Low Power, 10 m廓, 2 A, 0.82 mm2 WLCSP Integrated Power Switch with Multiple Protection Features
|
|
SLG59M1693C
|
751Kb / 22P |
A 2 V, 17.4 m廓, 1.0 A pFET Integrated Power Switch with Discharge in a 0.56 mm2 WLCSP
|
|
SLG59M1742C
|
812Kb / 30P |
An Ultra-low Power, RDSON 18 m廓, 1 A, 0.82 mm2 WLCSP Integrated Power Switch with 550 關s Total Turn-on Time
|
|
SLG59M1748C
|
627Kb / 20P |
A Reverse Blocking 36 m廓, 2.2 A pFET Integrated Power Switch in 0.64 mm2 WLCSP
|
Renesas Technology Corp |
SLG59M1746C
|
1Mb / 33P |
An Ultra-low Power, RDSON 17.6 mΩ, 1 A, 0.82 mm2 WLCSP Load Switch with Controlled Inrush Current
2-Feb-2022 |
|
SLG59M1685C
|
955Kb / 24P |
A Low Power, 10 mΩ, 2 A, 0.82 mm2 WLCSP Load Switch with Multiple Protection Features
3-Feb-2022 |
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