Description
The ACE16302A is the N- and P-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is especially tailored
to minimize on-state resistance and provide superior switching performance. These devices are
particularly suited for low voltage applications such as notebook computer power management and other
battery powered circuits where high-side switching, low in-line power loss and resistance to transients are
needed.

Features
 N-Channel
30V/2.8A,RDS(ON)= 60mΩ@VGS=10V
30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V
 P-Channel
-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability

Applications
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter