FEATURES
 Fast Switching
 1.8V Lo w gate drive applications
 Improved dv/dt capability
 20 V/ 4.2 A,
RDS(ON) ON)= 35 mΩ( Typ ) @ V GS = 10V
RDS(ON) ON)= 43 mΩ( Typ ) @ V GS = 4.5V
RDS(ON) ON)= 57 mΩ( Typ ) @ V GS = 2 .5V
RDS(ON) ON)= 80 mΩ( Typ ) @ V GS = 1.8 V
 Reliable and Rugged

DESCRIPTION
The AM2319A, is P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced trench technology devices are well
Suited for high efficiency fast switching applications

The AM 2319A is available in SOT 2 3 packages.