Features
• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate-source voltage range for improved class C
operation
• In compliance with the European directive 2002/95/EC

Description
The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband
communication and ISM applications in the frequency range from HF to 1 GHz. It can
be used in class AB, B or C for all typical modulation formats.

Applications
• 2-30 MHz HF or short wave communication
• 30-88 MHz ground communication
• 118-140 MHz Avionics
• 136-174 MHz commercial ground communication
• 30-512 MHz Jammer, ground/air communication
• HF to 1000 MHz ISM - instrumentation