General Description
This device includes two specialized N−Channel MOSFETs in a
dual PQFN package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have
been designed to provide optimal power efficiency.

Features
Q1: N−Channel
• Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A
• Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A
Q2: N−Channel
• Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A
• Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
• MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing
• This Device is Pb−Free and is RoHS Compliant

Applications
• Computing
• Communications
• General Purpose Point of Load
• Notebook VCORE