FEATURES AND BENEFITS
• Power-Thru integrated isolated bias
□ No high-side bootstrap or external secondary-side bias
• Bipolar drive output, with adjustable regulated positive rail
• Regulated 3.3 V low power bias output
• 50 ns propagation delay, with excellent device-to-device
matching of 5 ns
• Separate drive output pins: pull-up (2.8 Ω) and pull-down
(1.0 Ω)
• Supply voltage 10.5 V < VDRV < 13.2 V
• Undervoltage lockout on primary VDRV and secondary VSEC
• Enable pin with fast response
• Overtemperature protection
• CMTI > 100 V/ns dv/dt immunity
• Creepage distance > 8 mm
• Distance-through-insulation DTI ≥ 450 μm
• Safety regulatory approvals (pending)
□ 5.7 kV RMS VISO per UL 1577
□ 8 kV pk VIOTM maximum transient isolation voltage
per VDE0884-11
□ 630 V pk maximum working isolation voltage

DESCRIPTION
The AHV85111 isolated gate driver is optimized for driving
GaNFETs in multiple applications. An isolated dual positive/
negative output bias supply is integrated into the driver device,
eliminating external gate drive auxiliary bias supply or high-side
bootstrap. The bipolar output rails with adjustable and regulated
positive rail improves dv/dt immunity, greatly simplifies the
system design, and reduces EMI through reduced total commonmode
(CM) capacitance. It also allows the driving of a floating
switch in any location in a switching power topology.
The driver has fast propagation delay and high peak source/
sink capability to efficiently drive GaNFETs in high-frequency
designs. High CMTI combined with isolated outputs for both
bias power and drive make it ideal in applications requiring
isolation, level-shifting, or ground separation for noise immunity.
The device is available in a compact low-profile surface-mount
NH package. Several protection features are integrated, including
undervoltage lockout on primary and secondary bias rails,
internal pull-down on IN pin and OUTPD pin, fast response
enable input, and overtemperature shutdown.