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PDTC114YT-Q Datasheet (PDF) - Nexperia B.V. All rights reserved
PDTC114YT-Q Datasheet PDF - Nexperia B.V. All rights reserved
No. de pieza PDTC114YT-Q
Descarga  PDTC114YT-Q Descarga
Tamaño del archivo   230.29 Kbytes
Page   12 Pages
Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descripción Electrónicos 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

PDTC114YT-Q Datasheet (PDF)

Go To PDF Page Descarga Datasheet
PDTC114YT-Q Datasheet PDF - Nexperia B.V. All rights reserved

No. de pieza PDTC114YT-Q
Descarga  PDTC114YT-Q Click to download

Tamaño del archivo   230.29 Kbytes
Page   12 Pages
Fabricante Electrónico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de inicio  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descripción Electrónicos 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

PDTC114YT-Q Datasheet (HTML) - Nexperia B.V. All rights reserved


PDTC114YT-Q Detalles de producto

1. General description
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
PNP complement: PDTA114YT

2. Features and benefits
• 100 mA output current capability
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs
• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications
• Digital application in automotive and industrial segments
• Cost-saving alternative for BC847-Q series in digital applications
• Controlling IC inputs
• Switching loads




Número de pieza similar - PDTC114YT-Q

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
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Nexperia B.V. All right...		 PDTC114YT-QR NEXPERIA-PDTC114YT-QR Datasheet
1Mb / 17P		 NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
Rev. 7 - 18 November 2011
PDTC114YT-QVL NEXPERIA-PDTC114YT-QVL Datasheet
1Mb / 17P		 NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
Rev. 7 - 18 November 2011
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Descripción similar - PDTC114YT-Q

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818Kb / 12P		 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
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