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P25Q80H Datasheet (PDF) - Puya Semiconductor Co., Ltd.

P25Q80H Datasheet PDF - Puya Semiconductor Co., Ltd.
No. de pieza P25Q80H
Descarga  P25Q80H Descarga
Tamaño del archivo   3005.38 Kbytes
Page   70 Pages
Fabricante Electrónico  PUYA [Puya Semiconductor Co., Ltd.]
Página de inicio  http://www.puyasemi.com/index_en.html
Logo PUYA - Puya Semiconductor Co., Ltd.
Descripción Electrónicos Ultra Low Power, 8M-bit Serial Multi I/O Flash Memory Datasheet

P25Q80H Datasheet (PDF)

Go To PDF Page Descarga Datasheet
P25Q80H Datasheet PDF - Puya Semiconductor Co., Ltd.

No. de pieza P25Q80H
Descarga  P25Q80H Click to download

Tamaño del archivo   3005.38 Kbytes
Page   70 Pages
Fabricante Electrónico  PUYA [Puya Semiconductor Co., Ltd.]
Página de inicio  http://www.puyasemi.com/index_en.html
Logo PUYA - Puya Semiconductor Co., Ltd.
Descripción Electrónicos Ultra Low Power, 8M-bit Serial Multi I/O Flash Memory Datasheet

P25Q80H Datasheet (HTML) - Puya Semiconductor Co., Ltd.


P25Q80H Detalles de producto

2 Description
The
P25Q80H is a serial interface Flash memory device designed for use in a wide variety of high volume
consumer based applications in which program code is shadowed from Flash memory into embedded or
external RAM for execution. The flexible er ase architecture of the device, with its page erase granularity it is
ideal for data storage as well, eliminating the need for additional data storage devices.
The erase block sizes of the device have been optimized to meet the needs of today's code and da
ta storage
applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.
Because certain code modules and data storage segments must reside by themselves in their own erase
regions, the wasted and unused memo ry space that occurs with large sectored and large block erase Flash
memory devices can be greatly reduced. This increased memory space efficiency allows additional code
routines and data storage segments to be added while still maintaining the same overal l device density.
The device also contains an additional 3*512
byte security registers with OTP lock (One Time
Programmable), can be used for purposes such as unique device serialization, system level Electronic Serial
Number (ESN) storage, locked key storage, etc.
Specifically designed for use in many different systems, the device supports read, program, and erase
operations w ith a wide supply voltage range of 2.3 V to 3.6V. No separate voltage is required for programming
and erasing.




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