General description
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features
■ Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
   supply voltage of 28 V and an IDq of 650 mA:
   ◆ Load power = 48 W (AV)
   ◆ Gain = 13.8 dB (typ)
   ◆ Efficiency = 38.5 % (typ)
   ◆ ACPR400 = −61 dBc (typ)
   ◆ ACPR600 = −74 dBc (typ)
   ◆ EVMrms = 2.1 % (typ)
■ Easy power control
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1800 MHz to 2000 MHz)
■ Internally matched for ease of use

Applications
■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
   applications in the 1800 MHz to 2000 MHz frequency range.