Technical Features
• High Power Density Footprint
• High Junction Temperature (175 °C) Operation
• Low-Inductance (6.7 nH) Design
• Implements Wolfspeed’s Third Generation SiC MOSFET
Technology
• Silicon Nitride Insulator and Copper Baseplate
• 1700 V Drain-Source Voltage
• Cross-pin Gate-Source Signal Pinout
Applications
• Energy
• Medical
• Motor & Motion Control
• Test and Production Equipment
• Transportation
• Traction Inverters
1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module
VDS 1700 V
I
DS 320 A
System Benefits
• Terminal layout allows for direct bus bar connection without bends
or bushings enabling a simple, low-inductance design.
• Isolated, integrated temperature sensing enables high-level temperature protection.
• Dedicated high-side Kelvin-drain pin enables direct voltage sensing
for gate driver overcurrent protection.
• 1700 VDS allows use with higher bus voltage (typically up to 1.4 kV).