Technical Features
• High Power Density Footprint
• High Junction Temperature (175 °C) Operation
• Low Inductance (6.7 nH) Design
• Implements Conduction Optimized Third
Generation SiC MOSFET Technology
• Silicon Nitride Insulator and Copper Baseplate

VDS 1200 V
IDS 450 A
System Benefits
• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,
low inductance design.
• Isolated integrated temperature sensing enables high-level temperature protection.
• Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.
Applications
• Motor & Traction Drives
• Vehicle Fast Chargers
• Uninterruptable Power Supplies
• Smart-Grid / Grid-Tied Distributed Generation