Description
Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT)
on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent
power added efficiency in comparison to other technologies. GaN has superior properties
compared to silicon or gallium arsenide, including higher breakdown voltage, higher
saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to GaAs transistors. This IM FET is
available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Features
• 8.4 - 9.6 GHz Operation
• 80 W POUT typical
• 10 dB Power Gain
• 55% Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop
Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security