GTVA263202FC-V1-R2 Datasheet(PDF) - WOLFSPEED, INC.

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GTVA263202FC-V1-R2 Datasheet (PDF) - WOLFSPEED, INC.

GTVA263202FC-V1-R2 Datasheet PDF - WOLFSPEED, INC.


No. de pieza	GTVA263202FC-V1-R2

Descarga	GTVA263202FC-V1-R2 Descarga

Tamaño del archivo	632.59 Kbytes

Page	8 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

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Descripción Electrónicos

Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz

GTVA263202FC-V1-R2 Datasheet (PDF)

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GTVA263202FC-V1-R2 Datasheet PDF - WOLFSPEED, INC.


No. de pieza	GTVA263202FC-V1-R2

Descarga	GTVA263202FC-V1-R2 Click to download

Tamaño del archivo	632.59 Kbytes

Page	8 Pages

Fabricante Electrónico	WOLFSPEED [WOLFSPEED, INC.]

Página de inicio	https://www.wolfspeed.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz

GTVA263202FC-V1-R2 Datasheet (HTML) - WOLFSPEED, INC.

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GTVA263202FC-V1-R2 Detalles de producto

Description
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and
a thermally-enhanced surface-mount package with earless flange
Features
• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance, 2690 MHz, 48 V,
combined outputs
- Output power at P3dB = 340 W
- Drain efficiency = 70%
- Gain = 16 dB
• Capable of handling 10:1 VSWR @48 V, 80 W (CW)
output power
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Número de pieza similar - GTVA263202FC-V1-R2

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz

Descripción similar - GTVA263202FC-V1-R2

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA261701FA-V1	750Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA262711FA	594Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27

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