1. General description
NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted
Device (SMD)plastic package.

2. Features and benefits
• 300 mW total power dissipation
• Very small 1.6 x 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Low collector capacitance
• Low VCEsat
• High current capabilities
• Improved thermal behaviour due to flat leads
• Reduced required PCB area
• Reduced pick and place costs.

3. Applications
• Heavy duty battery powered equipment (telecom and audio-video) such as lamp drivers
• VCEsat critical applications such as latest low supply voltage IC applications
• All battery driven equipment, to save battery power