1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Saves PCB space due to small
footprint
Simple gate drive required due to low
gate charge
Suitable for logic level gate drive
sources
1.3 Applications
Computer motherboards
DC-to-DC convertors
Notebook computers
Switched-mode power supplies