FEATURES
• Supply voltage for controller block: 5 V, supply voltage for output block: 12 V
3 V input available for the input interface
• Low on-state resistance (total on-state resistance of upper and lower MOS FETs) RON = 1.3 W (TYP.)
• Low power consumption due to 3-phase full-wave PWM drive method
• On-chip hole bias switch (linked with STB pin)
• On-chip IND (FG) pulse switching function, 1-phase output or 3-phase composite output
• START/STOP pin included, acting as a brake during STOP
• Standby pins included, turning off internal circuit in standby
• Low current consumption: IDD = 3 mA (Max.), IDD (ST) = 1 mA (Max.)
• On-chip thermal shutdown circuit
• On-chip current limiting circuit; reference voltage can be set externally
• On-chip low voltage malfunction prevention circuit
• On-chip reverse rotation prevention circuit
• 30-pin plastic shrink SOP (300 mil)