Features
• Excellent thermal stability
• Common source push-pull configuration
• POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz
• Pulse conditions: 1ms, 10%
• In compliance with the 2002/95/EC European directive
• ST air-cavity STAC package technology

Description
The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended
for 100 V pulse applications up to 250 MHz. This device is suitable for use in
industrial, scientific and medical applications. The STAC4932B benefits from the
latest generation of efficient, patent-pending STAC package technology.