The PESDNC2FD5VB protects sensitive
semiconductor components from damage or
upset due to electrostatic discharge (ESD) and
other voltage induced transient events. They
feature large cross-sectional area junctions for
conducting high transient currents, offer
desirable electrical characteristics for board
level protection, such as fast response time,
low operating voltage. It gives designer the
flexibility to protect one bi-directional line in
applications where arrays are not practical.
Description

80W peak pulse power per line (tP = 8/20μs)
DFN1006 package
Replacement for MLV(0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
Featu re

Application s
Cellular phones
Portable devices
Digital cameras
Power supplies