FEATURES
 GaN Drive Technology fully Optimized for GaN FETs
 Output Voltage up to 100V
 Wide VIN Range: 4V to 60V and Operates Down to 1V
After Start-Up
 No Catch, Clamp, or Bootstrap Diodes Needed
 Internal Smart Bootstrap Switches Prevent
Overcharging of High-Side Driver Supplies
 Resistor Adjustable Dead Times
 Split Output Gate Drivers for Adjustable Turn-On
and Turn-Off Driver Strengths
 Accurate Adjustable Driver Voltage and UVLO
 Low Operating IQ: 15μA
 Programmable Frequency (100kHz to 3MHz)
 Synchronizable Frequency (100kHz to 3MHz)
 Spread Spectrum Frequency Modulation
 40-Lead (6mm × 6mm), Side Wettable, QFN Package
 AEC-Q100 Qualified for Automotive Applications
APPLICATIONS
 Automotive and Industrial Power Systems
 Military Avionics and Medical Systems
 Telecommunications Power Systems
GENERAL DESCRIPTION
The LTC®7892 is a high-performance dual boost
DC-to-DC switching regulator controller that drives all
N-channel synchronous gallium nitride (GaN) field effect
transistor (FET) power stages with output voltages up to
100V. The LTC7892 solves many of the challenges
traditionally faced when using GaN FETs. The LTC7892
simplifies the application design while requiring no
protection diodes and no other additional external
components compared to a silicon metal-oxidesemiconductor
field effect transistor (MOSFET) solution.
The Internal smart bootstrap switches prevent
overcharging of the BOOSTx pin to the SWx pin
the high-side driver supplies during dead times,
protecting the gate of the top GaN FET. The dead times
of the LTC7892 can optionally be optimized with
external resistors for margin or to tailor the application
for higher efficiency and allowing for high-frequency
operation.
The gate drive voltage of the LTC7892 can be precisely
adjusted from 4V to 5.5V to optimize performance and
allow the use of different GaN FETs or even logic-level
MOSFETs. When biased from the boost converter
regulator output, the LTC7892 can operate from an
input supply as low as 1V after start-up.