▪ Qualified & Screened to DLA SMD 5962-95813
▪ No latch-up, dielectrically isolated device islands
▪ Pinout and functionally compatible with the
HS-303RH series of analog switches
▪ Analog signal range equal to the supply voltage
range
▪ Low leakage: 150nA (max, post-rad)
▪ Low rON: 60Ω (max, post-rad)
▪ Low standby supply current: ±150μA (max,
post-rad)
▪ TID Rad Hard Assurance (RHA) wafer-by-wafer
testing
• HDR (50rad(Si)/s to 300rad(Si)/s): 100krad(Si)
• LDR (<0.01rad(Si)/s): 50krad(Si)
▪ SEE Characterization
• For LET = 60MeV·cm2/mg at 60° incident angle,
<150pC charge transferred to the output of an off
switch (based on SOI design calculations)