Description
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Features
• Low forward voltage
• Low switching noise
• High current capacity
• Guarantee reverse avalanche
• Guard-ring for stress protection
• Low power loss and high efficiency
• 175°C operating junction temperature
• Low stored charge majority carrier conduction
• Flammability classification 94V-0