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SN74CB3Q6800 Datasheet (PDF) - Texas Instruments

SN74CB3Q6800 Datasheet PDF - Texas Instruments
No. de pieza SN74CB3Q6800
Descarga  SN74CB3Q6800 Descarga
Tamaño del archivo   562.06 Kbytes
Page   20 Pages
Fabricante Electrónico  TI2 [Texas Instruments]
Página de inicio  https://www.ti.com
Logo TI2 - Texas Instruments
Descripción Electrónicos 10-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

SN74CB3Q6800 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
SN74CB3Q6800 Datasheet PDF - Texas Instruments

No. de pieza SN74CB3Q6800
Descarga  SN74CB3Q6800 Click to download

Tamaño del archivo   562.06 Kbytes
Page   20 Pages
Fabricante Electrónico  TI2 [Texas Instruments]
Página de inicio  https://www.ti.com
Logo TI2 - Texas Instruments
Descripción Electrónicos 10-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

SN74CB3Q6800 Datasheet (HTML) - Texas Instruments


SN74CB3Q6800 Detalles de producto

FEATURES
· High-Bandwidth Data Path (Up To 500 MHz (1))
· 5-V Tolerant I/Os With Device Powered Up or
Powered Down
· Low and Flat ON-State Resistance (ron)
Characteristics Over Operating Range
(ron = 4.5 W Typ)
· Rail-to-Rail Switching on Data I/O Ports
– 0- to 5-V Switching With 3.3-V VCC
– 0- to 3.3-V Switching With 2.5-V VCC
· B-Port Outputs Are Precharged by Bias
Voltage (BIASV) to Minimize Signal Distortion
During Live Insertion and Hot Plugging
· Supports PCI Hot Plug
· Bidirectional Data Flow With Near-Zero
Propagation Delay
· Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(Cio(OFF) = 3.5 pF Typ)
(1) For additional information regarding the performance
characteristics of the CB3Q family, refer to the TI application
report, CBT-C, CB3T, and CB3Q Signal-Switch Families,
literature number SCDA008.
· Fast Switching Frequency (fON= 20 MHz Max)
· Data and Control Inputs Provide Undershoot
Clamp Diodes
· Low Power Consumption (ICC = 0.75 mA Typ)
· VCC Operating Range From 2.3 V to 3.6 V
· Data I/Os Support 0- to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
· Control Inputs Can Be Driven by TTL or
5-V/3.3-V CMOS Outputs
· Ioff Supports Partial-Power-Down Mode
Operation
· Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
· ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
· Supports Both Digital and Analog
Applications: PCI Interface, Differential Signal
Interface, Memory Interleaving, Bus Isolation,
Low-Distortion Signal Gating

DESCRIPTION/ORDERING INFORMATION
The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of
the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows
for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device
also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.
Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized
interface solution ideally suited for broadband communications, networking, and data-intensive computing
systems.
The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable (ON) input. When ON is low, the 10-bit
bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When
ON is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B
port is precharged to bias voltage (BIASV) through the equivalent of a 10-kW resistor when ON is high, or if the
device is powered down (VCC = 0 V).
During insertion (or removal) of a card into (or from) an active bus, the card's output voltage may be close to
GND. When the connector pins make contact, the card's parasitic capacitance tries to force the bus signal to
GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with
precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on
the active bus. This method ensures that any glitch produced by insertion (or removal) of the card does not cross
the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, ON should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.




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