Distinctive Characteristics
 65 nm MirrorBit Eclipse Technology
 Single supply (VCC) for read / program / erase (2.7V to 3.6V)
 Versatile I/O Feature
– Wide I/O voltage range (VIO): 1.65V to VCC
 x16 data bus
 Asynchronous 32-byte Page read
 512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of 512 bytes
 Single word and multiple program on same word options
 Sector Erase
– Uniform 128-kbyte sectors
 Suspend and Resume commands for Program and Erase
operations
 Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
 Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each sector
 Separate 1024-byte One Time Program (OTP) array with two
lockable regions
 Common Flash Interface (CFI) parameter table
 Temperature Range
– Industrial (-40°C to +85°C)
– In-Cabin (-40°C to +105°C)
 100,000 erase cycles for any sector typical
 20-year data retention typical
 Packaging Options
– 56-pin TSOP
– 64-ball LAA Fortified BGA, 13 mm x 11 mm
– 64-ball LAE Fortified BGA, 9 mm x 9 mm
– 56-ball VBU Fortified BGA, 9 mm x 7 mm