Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.

Features
30V, 80A, RDS(ON)=5.5mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS guaranteed
Green Device Available
DFN5X6-8L package design

Applications
MB / VGA / Vcore
POL Applications
SMPS 2nd SR