RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

• CDMA Performance @ 1990 MHz, 26 Volts
    IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
    885 kHz — -47 dBc in 30 kHz BW
    1.25 MHz — -55 dBc in 12.5 kHz BW
    2.25 MHz — -55 dBc in 1 MHz BW
    Output Power — 4.5 Watts Avg.
    Power Gain — 13.5 dB
    Efficiency — 17%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW Output Power

Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.