DESCRIPTION
➤  2SB267100MA  is  a schottky  barrier  diode  chips
   fabricated in silicon epitaxial planar technology;
➤  Due to special schottky barrier structure, the   chips
   have  very  low  reverse  leakage  current  (  typical
   IR=0.002mA@Vr=100V  )  and  maximum  150°C
   operation junction temperature;
➤  Low power losses, high efficiency;
➤  Guard ring construction for transient protection;
➤  High ESD capability;
➤  High surge capability;
➤  Packaged products are widely used in switching
   power suppliers, polarity protection circuits and
   other electronic circuits;
➤  Chip Size: 2670mm X 2670μm;
➤ Chip Thickness: 280±20μm;
➤ Have two top side electrode materials for customer
   to choose, detail refer to ordering specifications.