Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications

• Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)
                                                         N Channel RDS (ON) = 20 mΩ (typ.)
• High forward transfer admittance : P Channel |Yfs| = 12S (typ.)
                                                         N Channel |Yfs| = 14S (typ.)
• Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V)
                                      N Channel IDSS = 10 μA (VDS = 30 V)
• Enhancement-mode
   : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
     N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)