The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency switching power supplies, free wheeling diodes and polarity protection diodes.

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Matched Dual Die Construction

• High Junction Temperature Capability

• High dv/dt Capability

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guardring for Stress Protection

• Epoxy Meets UL94, VO at 1/8″

• Electrically Isolated. No Isolation Hardware Required.

• UL Recognized File #E69369

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 1.9 grams (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Shipped 50 units per plastic tube

• Marking: B20200