Description

The  FM25V02  is  a  256-kilobit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A

ferroelectric  random  access  memory  or  F-RAM  is nonvolatile  and  performs  reads  and  writes  like  a

RAM. It provides reliable data retention for 10 years while  eliminating  the  complexities,  overhead,  and

system  level  reliability  problems  caused  by  Serial Flash and other nonvolatile memories.

Features

256K bit Ferroelectric Nonvolatile RAM

Organized as 32,768 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 Year Data Retention

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process



Very Fast Serial Peripheral Interface - SPI

Up to 40 MHz Frequency

Direct Hardware Replacement for Serial Flash

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)



Write Protection Scheme

Hardware Protection

Software Protection

Device ID

Device ID reads out Manufacturer ID & Part ID



Low Voltage, Low Power

Low Voltage Operation 2.0V – 3.6V

90  A Standby Current (typ.)

5  A Sleep Mode Current (typ.)



Industry Standard Configurations

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

8-pin “Green”/RoHS TDFN Package