FPDA200V Datasheet(PDF) - Filtronic Compound Semiconductors

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FPDA200V Datasheet (PDF) - Filtronic Compound Semiconductors

FPDA200V Datasheet PDF - Filtronic Compound Semiconductors


No. de pieza	FPDA200V

Descarga	FPDA200V Descarga

Tamaño del archivo	57.52 Kbytes

Page	3 Pages

Fabricante Electrónico	FILTRONIC [Filtronic Compound Semiconductors]

Página de inicio	http://www.filtronic.co.uk/

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Descripción Electrónicos

HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

FPDA200V Datasheet (PDF)

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FPDA200V Datasheet PDF - Filtronic Compound Semiconductors


No. de pieza	FPDA200V

Descarga	FPDA200V Click to download

Tamaño del archivo	57.52 Kbytes

Page	3 Pages

Fabricante Electrónico	FILTRONIC [Filtronic Compound Semiconductors]

Página de inicio	http://www.filtronic.co.uk/

Logo

Descripción Electrónicos	HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

FPDA200V Datasheet (HTML) - Filtronic Compound Semiconductors

FPDA200V Datasheet HTML 1Page - Filtronic Compound Semiconductors

FPDA200V Datasheet HTML 2Page - Filtronic Compound Semiconductors

FPDA200V Datasheet HTML 3Page - Filtronic Compound Semiconductors

FPDA200V Detalles de producto

DESCRIPTION AND APPLICATIONS
The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.

FEATURES
♦ 21 dBm Output Power at 1-dB Compression at 18 GHz
♦ 12.5 dB Power Gain at 18 GHz
♦ 55% Power-Added Efficiency
♦ Source Vias to Backside Metallization

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Descripción similar - FPDA200V

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