RFL1N18 Datasheet(PDF) - New Jersey Semi-Conductor Products, Inc.

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RFL1N18 Datasheet (PDF) - New Jersey Semi-Conductor Products, Inc.

RFL1N18 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.


No. de pieza	RFL1N18

Descarga	RFL1N18 Descarga

Tamaño del archivo	96.15 Kbytes

Page	2 Pages

Fabricante Electrónico	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

Página de inicio	http://www.njsemi.com

Logo

Descripción Electrónicos

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

RFL1N18 Datasheet (PDF)

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RFL1N18 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.


No. de pieza	RFL1N18

Descarga	RFL1N18 Click to download

Tamaño del archivo	96.15 Kbytes

Page	2 Pages

Fabricante Electrónico	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

Página de inicio	http://www.njsemi.com

Logo

Descripción Electrónicos	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

RFL1N18 Datasheet (HTML) - New Jersey Semi-Conductor Products, Inc.

RFL1N18 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc.

RFL1N18 Datasheet HTML 2Page - New Jersey Semi-Conductor Products, Inc.

RFL1N18 Detalles de producto

Description
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.

Features
• 1A, 80V and 100V
• rDS(ON) = 1.200Ω

Número de pieza similar - RFL1N18

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Intersil Corporation	RFL1N18	43Kb / 5P	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998
New Jersey Semi-Conduct...	RFL1N18L	92Kb / 2P	N-Channel Logic Level Power Field-Effect Transistors (L2 FET)
New Jersey Semi-Conduct...	RFL1N18L	92Kb / 2P	N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

Descripción similar - RFL1N18

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Fairchild Semiconductor	IRF640	132Kb / 7P	18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
Intersil Corporation	IRF630	62Kb / 7P	9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs June 1999
	IRFR220	55Kb / 7P	4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs July 1999
	RFK25N18	42Kb / 5P	25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs October 1998
	RFL1N08	30Kb / 4P	1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs September 1998
	RFL1N12	43Kb / 5P	1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998
	RFL1N18	43Kb / 5P	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998
	RFL1P08	42Kb / 4P	1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998
	RFM12N18	35Kb / 4P	12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998
New Jersey Semi-Conduct...	RFL1P08	90Kb / 2P	1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

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