| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Hitachi Semiconductor |
PF00105A
|
62Kb / 11P |
MOS FET Power Amplifier Module for AMPS Handy Phone
|
|
PF01410A
|
25Kb / 4P |
MOS FET Power Amplifier Module for GSM Handy Phone
|
|
PF01411A
|
25Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
|
PF01411B
|
26Kb / 4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
|
PF0415A
|
32Kb / 5P |
MOS FET Power Amplifier Module for PCS 1900 Handy Phone
|
 Renesas Technology Corp |
E2081606_PF08127B
|
183Kb / 16P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
|
 Hitachi Semiconductor |
PF0140
|
246Kb / 7P |
MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE
|
 Renesas Technology Corp |
PF08109B
|
249Kb / 25P |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
|
 Hitachi Semiconductor |
PF0027
|
287Kb / 7P |
MOS FET Power Ampllfier Module for E-TACS Handy Phone
|
 Renesas Technology Corp |
PF08127
|
140Kb / 18P |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
Oct. 2002 |