| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Hamamatsu Corporation |
P2748
|
172Kb / 4P |
MCT photoconductive detector
|
 Intersil Corporation |
MCT3A65P100F2
|
67Kb / 8P |
65A, 1000V, P-Type MOS-Controlled Thyristor (MCT)
April 1999 |
|
MCTG35P60F1
|
50Kb / 5P |
35A, 600V P-Type MOS Controlled Thyristor (MCT)
April 1999 |
|
MCTV35P60F1D
|
53Kb / 5P |
35A, 600V P-Type MOS Controlled Thyristor (MCT) with Anti-Parallel Diode
April 1999 |
|
MCTV75P60E1
|
50Kb / 5P |
75A, 600V P-Type MOS Controlled Thyristor (MCT)
April 1999 |
 Toshiba Semiconductor |
TPC8106-H
|
512Kb / 7P |
SILICON P CHANNEL MOS TYPE
|
|
TPCP8302
|
272Kb / 7P |
Silicon P Channel MOS Type (U-MOS??
|
|
TPC8127
|
222Kb / 7P |
Silicon P Channel MOS Type (U-MOS??
|
|
TPCA8109
|
238Kb / 7P |
Silicon P Channel MOS Type (U-MOS??
|
 Unisonic Technologies |
UTT65P04
|
132Kb / 3P |
65A, 40V P-CHANNEL POWER MOSFET
|