MJD112 Datasheet(PDF) - KEC(Korea Electronics)

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MJD112 Datasheet (PDF) - KEC(Korea Electronics)

MJD112 Datasheet PDF - KEC(Korea Electronics)


No. de pieza	MJD112

Descarga	MJD112 Descarga

Tamaño del archivo	394.6 Kbytes

Page	2 Pages

Fabricante Electrónico	KEC [KEC(Korea Electronics)]

Página de inicio	http://www.keccorp.com

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Descripción Electrónicos

EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MJD112 Datasheet (PDF)

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MJD112 Datasheet PDF - KEC(Korea Electronics)


No. de pieza	MJD112

Descarga	MJD112 Click to download

Tamaño del archivo	394.6 Kbytes

Page	2 Pages

Fabricante Electrónico	KEC [KEC(Korea Electronics)]

Página de inicio	http://www.keccorp.com

Logo

Descripción Electrónicos	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MJD112 Datasheet (HTML) - KEC(Korea Electronics)

MJD112 Datasheet HTML 1Page - KEC(Korea Electronics)

MJD112 Datasheet HTML 2Page - KEC(Korea Electronics)

MJD112 Detalles de producto

MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES
• High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
• Low Collector-Emitter Saturation Voltage.
• Straight Lead (IPAK, "L" Suffix)
• Complementary to MJD117/L.

Número de pieza similar - MJD112

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	MJD112	306Kb / 6P	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
ON Semiconductor	MJD112	147Kb / 8P	Complementary Darlington Power Transistors August, 2004 ??Rev. 5
STMicroelectronics	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Sep-1997
Fairchild Semiconductor	MJD112	51Kb / 5P	D-PAK for Surface Mount Applications
ON Semiconductor	MJD112	101Kb / 8P	Complementary Darlington Power Transistors January, 2006 ??Rev. 7

Descripción similar - MJD112

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Fairchild Semiconductor	TIP105	50Kb / 4P	Monolithic Construction With Built In Base- Emitter Shunt Resistors
KEC(Korea Electronics)	MJD117	394Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP112	74Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP112F	41Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP117	75Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP117F	42Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
SemiHow Co.,Ltd.	TIP100	744Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
	TIP125	510Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
	TIP106	750Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TAI-SAW TECHNOLOGY CO.,...	TIP140T	574Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors

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