| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Microsemi Corporation |
2731-100M
|
298Kb / 5P |
100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz
|
|
2731-20
|
63Kb / 3P |
20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz
|
 Cree, Inc |
CGH35060F2
|
1Mb / 11P |
60 W, 3100-3500 MHz, 28V, GaN HEMT
Rev 4.0 |
|
CGH35240F
|
1Mb / 12P |
240 W, 3100-3500 MHz, 50-ohm Input/
Rev 3.0 |
|
CGHV31500F
|
722Kb / 10P |
500 W, 2700 - 3100 MHz, 50-Ohm Input
Rev 1.0 |
|
CGHV35400F
|
829Kb / 11P |
400 W, 2900 - 3500 MHz, 50-Ohm Input
Rev 2.0 |
|
CGHV50200F
|
2Mb / 15P |
200 W, 4400 - 5000 MHz, 50-Ohm Input
Rev 1.1 |
|
CGHV59350
|
3Mb / 12P |
350 W, 5200 - 5900 MHz, 50-Ohm Input
Rev 0.0 |
|
CGHV96050F1
|
1Mb / 14P |
50 W, 7.9 - 9.6 GHz, 50-ohm, Input
Rev 2.0 |
|
GTVA311801FA
|
463Kb / 5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 ??3100 MHz
|