1N5817W Datasheet(PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

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1N5817W Datasheet (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

1N5817W Datasheet PDF - Sangdest Microelectronic (Nanjing) Co., Ltd


No. de pieza	1N5817W

Descarga	1N5817W Descarga

Tamaño del archivo	135.01 Kbytes

Page	4 Pages

Fabricante Electrónico	SMC [Sangdest Microelectronic (Nanjing) Co., Ltd]

Página de inicio	http://www.smc-diodes.com/

Logo

Descripción Electrónicos

Metal silicon junction, majority carrier conduction

1N5817W Datasheet (PDF)

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1N5817W Datasheet PDF - Sangdest Microelectronic (Nanjing) Co., Ltd


No. de pieza	1N5817W

Descarga	1N5817W Click to download

Tamaño del archivo	135.01 Kbytes

Page	4 Pages

Fabricante Electrónico	SMC [Sangdest Microelectronic (Nanjing) Co., Ltd]

Página de inicio	http://www.smc-diodes.com/

Logo

Descripción Electrónicos	Metal silicon junction, majority carrier conduction

1N5817W Datasheet (HTML) - Sangdest Microelectronic (Nanjing) Co., Ltd

1N5817W Datasheet HTML 1Page - Sangdest Microelectronic (Nanjing) Co., Ltd

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1N5817W Datasheet HTML 3Page - Sangdest Microelectronic (Nanjing) Co., Ltd

1N5817W Datasheet HTML 4Page - Sangdest Microelectronic (Nanjing) Co., Ltd

1N5817W Detalles de producto

Features:
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• Low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications

Número de pieza similar - 1N5817W

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
SEMTECH ELECTRONICS LTD...	1N5817W	241Kb / 3P	1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
DONGGUAN YOU FENG WEI E...	1N5817W	75Kb / 3P	SCHOTTKY BARRIER RECTIFIERS
Dc Components	1N5817W	59Kb / 2P	RECTIFIER SPECIALISTS
Xian Semipower Electron...	1N5817W	123Kb / 3P	SCHOTTKY BARRIER RECTIFIERS
Jiangsu High diode Semi...	1N5817W	1Mb / 3P	SOT-23-3L Plastic-Encapsulate Diodes

Descripción similar - 1N5817W

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Gaomi Xinghe Electronic...	B5817W	300Kb / 3P	Low stored change,majority carrier conduction.
Taiwan Semiconductor Co...	MBR20200PT	103Kb / 2P	Metal silicon junction, majority carrier conduction
Gaomi Xinghe Electronic...	MBR1030	377Kb / 2P	Metal of silicon rectifier , majority carrier conduction
Kersemi Electronic Co.,...	MBR10H60	1Mb / 3P	Metal silicon junction, majority carrier conduction
Sangdest Microelectroni...	SS3L45	150Kb / 5P	Metal to sillicon rectifier, majority carrier conduction
SHIKUES Electronics	B5817WS	2Mb / 4P	Extremely low, Low stored change, Majority carrier conduction
Shanghai Leiditech Elec...	B5817W	790Kb / 3P	Low stored change,majority carrier conduction.
Shanghai Leiditech Elec...	RB160M-30	587Kb / 3P	Low stored change,majority carrier conduction.
Shenzhen Luguang Electr...	SS345FL	1Mb / 2P	Metal silicon junction, majority carrier conduction
Guangdong Youtai Semico...	SS52	198Kb / 3P	Metal to silicon rectifier, majority carrier conduction.

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