The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
   f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
   Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz
   and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
   at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
   on CCDF.
      Output Power — 10 Watts Avg.
      Efficiency — 23.5%
      Gain — 15 dB
      IM3 — -37.5 dBc
      ACPR — -41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.