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NX8369TB Datasheet (PDF) - California Eastern Labs
NX8369TB Datasheet PDF - California Eastern Labs
No. de pieza NX8369TB_16
Descarga  NX8369TB Descarga
Tamaño del archivo   676.04 Kbytes
Page   9 Pages
Fabricante Electrónico  CEL [California Eastern Labs]
Página de inicio  http://www.cel.com
Logo CEL - California Eastern Labs
Descripción Electrónicos LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8369TB Datasheet (PDF)

Go To PDF Page Descarga Datasheet
NX8369TB Datasheet PDF - California Eastern Labs

No. de pieza NX8369TB_16
Descarga  NX8369TB Click to download

Tamaño del archivo   676.04 Kbytes
Page   9 Pages
Fabricante Electrónico  CEL [California Eastern Labs]
Página de inicio  http://www.cel.com
Logo CEL - California Eastern Labs
Descripción Electrónicos LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8369TB Datasheet (HTML) - California Eastern Labs




Número de pieza similar - NX8369TB_16

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Renesas Technology Corp		 NX8369TB RENESAS-NX8369TB_15 Datasheet
206Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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Descripción similar - NX8369TB_16

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Renesas Technology Corp		 NX8346TS RENESAS-NX8346TS Datasheet
172Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8369TB RENESAS-NX8369TB Datasheet
213Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TB RENESAS-NX8349TB Datasheet
211Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
California Eastern Labs		 NX8369TB CEL-NX8369TB Datasheet
214Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
Renesas Technology Corp		 NX8349YK RENESAS-NX8349YK_15 Datasheet
253Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TS RENESAS-NX8346TS_15 Datasheet
164Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TB RENESAS-NX8349TB_15 Datasheet
204Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8349TS RENESAS-NX8349TS_15 Datasheet
246Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8369TS RENESAS-NX8369TS_15 Datasheet
204Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
logo
California Eastern Labs		 NX8349TS CEL-NX8349TS_16 Datasheet
705Kb / 9P		 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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Sobre a California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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