Description
This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switchinglosses with a minimized QRR that makes it perfect for use in circuits working in hard-switching mode. In particular the VF/QRR trade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio. The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints. Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits. 72$&LQV $ $ . .

Features
■ High voltage rectifier
■ Tandem diodes in series
■ Very low switching losses
■ Insulated device with internal ceramic
■ Equal thermal conditions for both 300 V diodes
■ Static and dynamic equilibrium of internal diodes are warranted by design
■ Insulated package: – Insulated voltage: 2500 VRMS sine