Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. PowerFLAT™ 3.3 x 3.3 1 2 3 4 D(5, 6, 7, 8) G(4) S(1, 2, 3) 8 1 2 3 4 7 6 5 AM15810v1

Features
■ Among the lowest RDS(on) on the market
■ Excellent figure of merit (FoM)
■ Low Crss/Ciss ratio for EMI immunity
■ High avalanche ruggedness

Applications
■ Switching applications