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No. de pieza	NE552R479A

Descripción Electrónicos	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

Tamaño del archivo	495.06 Kbytes

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Fabricante Electrónico	CEL [California Eastern Labs]

Página de inicio	http://www.cel.com

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Número de pieza similar - NE552R479A

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
California Eastern Labs	NE552R479A	605Kb / 7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
Renesas Technology Corp	NE552R479A	291Kb / 11P	SILICON POWER MOS FET 2003
California Eastern Labs	NE552R479A-T1	605Kb / 7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
Renesas Technology Corp	NE552R479A-T1	291Kb / 11P	SILICON POWER MOS FET 2003
California Eastern Labs	NE552R479A-T1-A	605Kb / 7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

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