MGP4N60ED pdf, MGP4N60ED Descripción Electrónicos, MGP4N60ED Datasheet, MGP4N60ED view ::: ALLDATASHEET :::

No. de pieza	MGP4N60ED

Descripción Electrónicos	Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Tamaño del archivo	146.13 Kbytes

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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Número de pieza similar - MGP4N60ED

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	MGP4N60E	124Kb / 6P	Insulated Gate Bipolar Transistor
ON Semiconductor	MGP4N60E	120Kb / 5P	Insulated Gate Bipolar Transistor 1997 REV 1

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	MGV12N120D	79Kb / 4P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
	MGW12N120D	250Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
	MGW20N60D	246Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
	MGY20N120D	254Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
	MGY25N120D	256Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
	MGY30N60D	254Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
	MGY40N60D	247Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
ON Semiconductor	MGW12N120D	168Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode 1998 REV 2
	MGY20N120D	171Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode REV 1
	MGY25N120D	171Kb / 6P	Insulated Gate Bipolar Transistor with Anti-Parallel Diode REV 2