| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Fairchild Semiconductor |
FQD2N100
|
622Kb / 9P |
1000V N-Channel MOSFET
|
|
FQA8N100C
|
693Kb / 8P |
1000V N-Channel MOSFET
|
 International Rectifier |
IRFMG50
|
137Kb / 7P |
POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)
|
|
IRHY7G30CMSE
|
110Kb / 8P |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard??HEXFET TECHNOLOGY
|
 Fairchild Semiconductor |
FQH8N100C
|
998Kb / 8P |
1000V N-Channel MOSFET
|
 Unisonic Technologies |
9N100
|
184Kb / 5P |
9A, 1000V N-CHANNEL POWER MOSFET
|
 Fairchild Semiconductor |
FQD2N100TM
|
736Kb / 9P |
1000V N-Channel MOSFET
|
 Kersemi Electronic Co.,... |
KSMD2N100
|
1Mb / 8P |
1000V N-Channel MOSFET
|
|
KSMU2N100
|
1Mb / 8P |
1000V N-Channel MOSFET
|
 Unisonic Technologies |
4N100-FC
|
621Kb / 9P |
4.0A, 1000V N-CHANNEL POWER MOSFET
2023 |