| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Toshiba Semiconductor |
015AZ2
|
234Kb / 5P |
Diode Silicon Epitaxial Planar Type
|
 KEC(Korea Electronics) |
KDV175E
|
295Kb / 2P |
SILICON EPITAXIAL PIN TYPE DIODE
|
|
KDS120V
|
68Kb / 1P |
SILICON EPITAXIAL TYPE DIODE
|
|
KDS112V
|
67Kb / 2P |
SILICON EPITAXIAL TYPE DIODE
|
|
KDS120
|
42Kb / 2P |
SILICON EPITAXIAL TYPE DIODE
|
|
KDS120
|
528Kb / 2P |
SILICON EPITAXIAL TYPE DIODE
|
|
KDS120E
|
356Kb / 2P |
SILICON EPITAXIAL TYPE DIODE
|
|
KDS120V
|
34Kb / 1P |
SILICON EPITAXIAL TYPE DIODE
|
|
KDS112
|
352Kb / 2P |
SILICON EPITAXIAL TYPE DIODE
|
|
KDS112E
|
349Kb / 2P |
SILICON EPITAXIAL TYPE DIODE
|